GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM
The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for f...
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| creator | Lee, Seokjong Jung, Jaesun Kim, Sojung Song, Taeho Byun, Hyeran Yeon, Changbong |
| description | The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.AnBmXo [Chemical Formula 1]wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022049352A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022049352A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022049352A13</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbs4iPoPD1wVamoHx7R5aQImKS-vOJYicRIt1P9HRUcHh8sZzuHOs6mhcGID1htbWQ4E-jNnfQNsrAdtj24DDtkE9duC9AoiOlsHr7r6_RK7KjJJRmgJW0moXjkSagpumc0uw3VKqy8X2Voj12abxnufpnE4p1t69F0UuRD5_lCUQu6K_6onaQo5rg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM</title><source>esp@cenet</source><creator>Lee, Seokjong ; Jung, Jaesun ; Kim, Sojung ; Song, Taeho ; Byun, Hyeran ; Yeon, Changbong</creator><creatorcontrib>Lee, Seokjong ; Jung, Jaesun ; Kim, Sojung ; Song, Taeho ; Byun, Hyeran ; Yeon, Changbong</creatorcontrib><description>The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.AnBmXo [Chemical Formula 1]wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220217&DB=EPODOC&CC=US&NR=2022049352A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220217&DB=EPODOC&CC=US&NR=2022049352A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Seokjong</creatorcontrib><creatorcontrib>Jung, Jaesun</creatorcontrib><creatorcontrib>Kim, Sojung</creatorcontrib><creatorcontrib>Song, Taeho</creatorcontrib><creatorcontrib>Byun, Hyeran</creatorcontrib><creatorcontrib>Yeon, Changbong</creatorcontrib><title>GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM</title><description>The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.AnBmXo [Chemical Formula 1]wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbs4iPoPD1wVamoHx7R5aQImKS-vOJYicRIt1P9HRUcHh8sZzuHOs6mhcGID1htbWQ4E-jNnfQNsrAdtj24DDtkE9duC9AoiOlsHr7r6_RK7KjJJRmgJW0moXjkSagpumc0uw3VKqy8X2Voj12abxnufpnE4p1t69F0UuRD5_lCUQu6K_6onaQo5rg</recordid><startdate>20220217</startdate><enddate>20220217</enddate><creator>Lee, Seokjong</creator><creator>Jung, Jaesun</creator><creator>Kim, Sojung</creator><creator>Song, Taeho</creator><creator>Byun, Hyeran</creator><creator>Yeon, Changbong</creator><scope>EVB</scope></search><sort><creationdate>20220217</creationdate><title>GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM</title><author>Lee, Seokjong ; Jung, Jaesun ; Kim, Sojung ; Song, Taeho ; Byun, Hyeran ; Yeon, Changbong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022049352A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Seokjong</creatorcontrib><creatorcontrib>Jung, Jaesun</creatorcontrib><creatorcontrib>Kim, Sojung</creatorcontrib><creatorcontrib>Song, Taeho</creatorcontrib><creatorcontrib>Byun, Hyeran</creatorcontrib><creatorcontrib>Yeon, Changbong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Seokjong</au><au>Jung, Jaesun</au><au>Kim, Sojung</au><au>Song, Taeho</au><au>Byun, Hyeran</au><au>Yeon, Changbong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM</title><date>2022-02-17</date><risdate>2022</risdate><abstract>The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.AnBmXo [Chemical Formula 1]wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | GROWTH INHIBITOR FOR FORMING THIN FILM, METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM |
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