Integrated Assemblies and Methods of Forming Integrated Assemblies

Some embodiments include a memory device having a vertical stack of alternating insulative levels and conductive levels. Memory cells are along the conductive levels. The conductive levels have control gate regions which include a first vertical thickness, have routing regions which include a second...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Surthi, Shyam, Kim, Byeung Chul
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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