Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process
An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing,...
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| creator | Lee, Jun Seok Mittal, Deven Raj Bhosle, Vikram M Bateman, Nicholas P.T Miller, Timothy J |
| description | An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022028693A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022028693A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022028693A13</originalsourceid><addsrcrecordid>eNrjZPAJTkwuykzLTM5MzFFwTiwoyMxLV_BJrEwtUnDLL1IISCwuzixLLMnMz1MILQbJBeQkFucm6jolFqemKHjmFuQk5pUoBBTlJ6cWF_MwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDIyCyMLM0djQ0Jk4VAB8oNiA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process</title><source>esp@cenet</source><creator>Lee, Jun Seok ; Mittal, Deven Raj ; Bhosle, Vikram M ; Bateman, Nicholas P.T ; Miller, Timothy J</creator><creatorcontrib>Lee, Jun Seok ; Mittal, Deven Raj ; Bhosle, Vikram M ; Bateman, Nicholas P.T ; Miller, Timothy J</creatorcontrib><description>An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220127&DB=EPODOC&CC=US&NR=2022028693A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220127&DB=EPODOC&CC=US&NR=2022028693A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Jun Seok</creatorcontrib><creatorcontrib>Mittal, Deven Raj</creatorcontrib><creatorcontrib>Bhosle, Vikram M</creatorcontrib><creatorcontrib>Bateman, Nicholas P.T</creatorcontrib><creatorcontrib>Miller, Timothy J</creatorcontrib><title>Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process</title><description>An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAJTkwuykzLTM5MzFFwTiwoyMxLV_BJrEwtUnDLL1IISCwuzixLLMnMz1MILQbJBeQkFucm6jolFqemKHjmFuQk5pUoBBTlJ6cWF_MwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDIyCyMLM0djQ0Jk4VAB8oNiA</recordid><startdate>20220127</startdate><enddate>20220127</enddate><creator>Lee, Jun Seok</creator><creator>Mittal, Deven Raj</creator><creator>Bhosle, Vikram M</creator><creator>Bateman, Nicholas P.T</creator><creator>Miller, Timothy J</creator><scope>EVB</scope></search><sort><creationdate>20220127</creationdate><title>Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process</title><author>Lee, Jun Seok ; Mittal, Deven Raj ; Bhosle, Vikram M ; Bateman, Nicholas P.T ; Miller, Timothy J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022028693A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jun Seok</creatorcontrib><creatorcontrib>Mittal, Deven Raj</creatorcontrib><creatorcontrib>Bhosle, Vikram M</creatorcontrib><creatorcontrib>Bateman, Nicholas P.T</creatorcontrib><creatorcontrib>Miller, Timothy J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Jun Seok</au><au>Mittal, Deven Raj</au><au>Bhosle, Vikram M</au><au>Bateman, Nicholas P.T</au><au>Miller, Timothy J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process</title><date>2022-01-27</date><risdate>2022</risdate><abstract>An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Sacrificial Capping Layer For Passivation Using Plasma-Based Implant Process |
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