RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY

Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying resul...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Ping-Kun, Chen, Yu-Ting, Pai, Chang-Tsung, Lin, Ming-Che, Liu, Chi-Ching, Liao, Shao-Ching
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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