RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY
Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying resul...
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| creator | Wang, Ping-Kun Chen, Yu-Ting Pai, Chang-Tsung Lin, Ming-Che Liu, Chi-Ching Liao, Shao-Ching |
| description | Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation. |
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To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220127&DB=EPODOC&CC=US&NR=2022028454A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220127&DB=EPODOC&CC=US&NR=2022028454A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Ping-Kun</creatorcontrib><creatorcontrib>Chen, Yu-Ting</creatorcontrib><creatorcontrib>Pai, Chang-Tsung</creatorcontrib><creatorcontrib>Lin, Ming-Che</creatorcontrib><creatorcontrib>Liu, Chi-Ching</creatorcontrib><creatorcontrib>Liao, Shao-Ching</creatorcontrib><title>RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY</title><description>Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. 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To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKcg12DQnx9HNX8HUN8fB3UfB3UwCKeQaHeIa5KgQ5-rn4-yo4Oju7BgcDVfj6B0XyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyMgsjAxNXE0NCZOFQAjbyfc</recordid><startdate>20220127</startdate><enddate>20220127</enddate><creator>Wang, Ping-Kun</creator><creator>Chen, Yu-Ting</creator><creator>Pai, Chang-Tsung</creator><creator>Lin, Ming-Che</creator><creator>Liu, Chi-Ching</creator><creator>Liao, Shao-Ching</creator><scope>EVB</scope></search><sort><creationdate>20220127</creationdate><title>RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY</title><author>Wang, Ping-Kun ; Chen, Yu-Ting ; Pai, Chang-Tsung ; Lin, Ming-Che ; Liu, Chi-Ching ; Liao, Shao-Ching</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022028454A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Ping-Kun</creatorcontrib><creatorcontrib>Chen, Yu-Ting</creatorcontrib><creatorcontrib>Pai, Chang-Tsung</creatorcontrib><creatorcontrib>Lin, Ming-Che</creatorcontrib><creatorcontrib>Liu, Chi-Ching</creatorcontrib><creatorcontrib>Liao, Shao-Ching</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Ping-Kun</au><au>Chen, Yu-Ting</au><au>Pai, Chang-Tsung</au><au>Lin, Ming-Che</au><au>Liu, Chi-Ching</au><au>Liao, Shao-Ching</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY</title><date>2022-01-27</date><risdate>2022</risdate><abstract>Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY |
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