HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)

The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a hig...

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Hauptverfasser: KAMMLER, Thorsten E, BAARS, Peter
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BAARS, Peter
description The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022020746A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022020746A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022020746A13</originalsourceid><addsrcrecordid>eNrjZAjw8HT3UAjz9wlxdHdVcI0IcfVzcXVRcAly9PRT8PUPdnMNUdBwdQGyNBVcXMM8nV2DFYAyjgogfbreCr6uIY4-Cu6OIa4KGh7evu6aPAysaYk5xam8UJqbQRlohrOHbmpBfnxqcUFicmpeakl8aLCRgREQGZibmDkaGhOnCgCWsS6k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)</title><source>esp@cenet</source><creator>KAMMLER, Thorsten E ; BAARS, Peter</creator><creatorcontrib>KAMMLER, Thorsten E ; BAARS, Peter</creatorcontrib><description>The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220120&amp;DB=EPODOC&amp;CC=US&amp;NR=2022020746A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220120&amp;DB=EPODOC&amp;CC=US&amp;NR=2022020746A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAMMLER, Thorsten E</creatorcontrib><creatorcontrib>BAARS, Peter</creatorcontrib><title>HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)</title><description>The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjw8HT3UAjz9wlxdHdVcI0IcfVzcXVRcAly9PRT8PUPdnMNUdBwdQGyNBVcXMM8nV2DFYAyjgogfbreCr6uIY4-Cu6OIa4KGh7evu6aPAysaYk5xam8UJqbQRlohrOHbmpBfnxqcUFicmpeakl8aLCRgREQGZibmDkaGhOnCgCWsS6k</recordid><startdate>20220120</startdate><enddate>20220120</enddate><creator>KAMMLER, Thorsten E</creator><creator>BAARS, Peter</creator><scope>EVB</scope></search><sort><creationdate>20220120</creationdate><title>HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)</title><author>KAMMLER, Thorsten E ; BAARS, Peter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022020746A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAMMLER, Thorsten E</creatorcontrib><creatorcontrib>BAARS, Peter</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAMMLER, Thorsten E</au><au>BAARS, Peter</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)</title><date>2022-01-20</date><risdate>2022</risdate><abstract>The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T05%3A28%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAMMLER,%20Thorsten%20E&rft.date=2022-01-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022020746A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true