SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact...

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Hauptverfasser: SHIRAISHI, Naohiro, KONDO, Katsunori, WATANABE, Noriyoshi, YATAGO, Masatoshi
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creator SHIRAISHI, Naohiro
KONDO, Katsunori
WATANABE, Noriyoshi
YATAGO, Masatoshi
description A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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