IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTIVE ELEMENT, AND SPUTTERING TARGET
A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. T...
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| creator | WATANABE, Yasunobu THAM, Kim Kong KUSHIBIKI, Ryousuke AONO, Masahiro |
| description | A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less. |
| format | Patent |
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The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. 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The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAUALs4iPoPD1xTaFocHJ_taxtIYkleBF1KkTiJFupP-NeCdBWcbri7ZfJWNu00WgKDjSVWF6qgVtoI-GXABM1K45kceHah5OBIQIuugoNCD18l5u3oyCvP6kRAmgxZFoC2At8FZnLKNsDoGuJ1srgN9yluZq6SbU1ctmkcn32cxuEaH_HVB59nuSz2UmY7lMV_1Qd5aj-C</recordid><startdate>20211216</startdate><enddate>20211216</enddate><creator>WATANABE, Yasunobu</creator><creator>THAM, Kim Kong</creator><creator>KUSHIBIKI, Ryousuke</creator><creator>AONO, Masahiro</creator><scope>EVB</scope></search><sort><creationdate>20211216</creationdate><title>IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTIVE ELEMENT, AND SPUTTERING TARGET</title><author>WATANABE, Yasunobu ; THAM, Kim Kong ; KUSHIBIKI, Ryousuke ; AONO, Masahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021391105A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>WATANABE, Yasunobu</creatorcontrib><creatorcontrib>THAM, Kim Kong</creatorcontrib><creatorcontrib>KUSHIBIKI, Ryousuke</creatorcontrib><creatorcontrib>AONO, Masahiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WATANABE, Yasunobu</au><au>THAM, Kim Kong</au><au>KUSHIBIKI, Ryousuke</au><au>AONO, Masahiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTIVE ELEMENT, AND SPUTTERING TARGET</title><date>2021-12-16</date><risdate>2021</risdate><abstract>A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS |
| title | IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTIVE ELEMENT, AND SPUTTERING TARGET |
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