SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.

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Bibliographische Detailangaben
Hauptverfasser: TEEHAN, Sean, LIE, Fee Li, KARVE, Gauri, MILLER, Eric R, BERGENDAHL, Marc Adam, SPORRE, John Ryan, ROBISON, Robert Russell
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.