METHOD AND APPARATUS FOR FORMATION OF PROTECTIVE SIDEWALL LAYER FOR BOW REDUCTION
A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (...
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| creator | KUMAGAI, Kae TOMURA, Maju SUDA, Ryutaro |
| description | A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD AND APPARATUS FOR FORMATION OF PROTECTIVE SIDEWALL LAYER FOR BOW REDUCTION |
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