ETCHING METHOD AND PLASMA PROCESSING APPARATUS

In an etching method, plasma from a processing gas containing a fluorocarbon gas is formed within a chamber of a plasma processing apparatus, and a deposit containing fluorocarbon is formed on a substrate. The substrate includes a first region formed of a silicon containing material and a second reg...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hosoya, Masanori, Iwano, Mitsuhiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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