TRANSISTOR AND MANUFACTURING METHOD THEREOF

Provided are a transistor and a manufacturing method thereof. The transistor includes a substrate, a collector, a base, an emitter and a diffusion barrier layer. The collector is disposed on the substrate. The base is disposed on the collector. The emitter is disposed on the base. The diffusion barr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shih, Yung-Yao, Liao, Hung-Kwei, Liu, Chen-Chiang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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