TRANSISTOR AND MANUFACTURING METHOD THEREOF

TRANSISTOR AND MANUFACTURING METHOD THEREOF

Provided are a transistor and a manufacturing method thereof. The transistor includes a substrate, a collector, a base, an emitter and a diffusion barrier layer. The collector is disposed on the substrate. The base is disposed on the collector. The emitter is disposed on the base. The diffusion barr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shih, Yung-Yao, Liao, Hung-Kwei, Liu, Chen-Chiang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided are a transistor and a manufacturing method thereof. The transistor includes a substrate, a collector, a base, an emitter and a diffusion barrier layer. The collector is disposed on the substrate. The base is disposed on the collector. The emitter is disposed on the base. The diffusion barrier layer is disposed between the base and the emitter. An upper portion of the base includes a doped layer, and the diffusion barrier layer is disposed on the doped layer. The emitter, the doped layer, and the collector are of a first conductive type, and the rest of the base is of a second conductive type.