SEMICONDUCTOR MEMORY DEVICES INCLUDING SEPARATE UPPER AND LOWER BIT LINE SPACERS AND METHODS OF FORMING THE SAME

A volatile memory device can include a bit line structure having a vertical side wall. A lower spacer can be on a lower portion of the vertical side wall, where the lower spacer can be defined by a first thickness from the vertical side wall to an outer side wall of the lower spacer. An upper spacer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jang, Semyeong, Kim, Daeik, Park, Jemin, Hwang, Yoosang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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