TRANSISTOR WITH BURIED P-FIELD TERMINATION REGION

In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer, depositing a second epitaxial layer on the first epitaxial layer, implanting the second epitaxial layer to form a p-field termination region, depositing a third epitaxial layer on the p-field termination...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Hoilien, Noel
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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