VARIABLE RESISTANCE NON-VOLATILE MEMORY ELEMENT AND VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICE USING THE ELEMENT

A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxy...

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Bibliographische Detailangaben

Hauptverfasser:	HIMENO, Atsushi, MIYAZAKI, Takehide, MIKAWA, Takumi, YASUHARA, Ryutaro, AKINAGA, Hiroyuki, FUJII, Satoru, NISHIO, Kengo, NAITOH, Yasuhisa, SHIMA, Hisashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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