VARIABLE RESISTANCE NON-VOLATILE MEMORY ELEMENT AND VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICE USING THE ELEMENT

A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxy...

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Hauptverfasser:	HIMENO, Atsushi, MIYAZAKI, Takehide, MIKAWA, Takumi, YASUHARA, Ryutaro, AKINAGA, Hiroyuki, FUJII, Satoru, NISHIO, Kengo, NAITOH, Yasuhisa, SHIMA, Hisashi
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Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	HIMENO, Atsushi MIYAZAKI, Takehide MIKAWA, Takumi YASUHARA, Ryutaro AKINAGA, Hiroyuki FUJII, Satoru NISHIO, Kengo NAITOH, Yasuhisa SHIMA, Hisashi
description	A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	VARIABLE RESISTANCE NON-VOLATILE MEMORY ELEMENT AND VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICE USING THE ELEMENT
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