STRUCTURES AND METHODS FOR SOURCE-DOWN VERTICAL SEMICONDUCTOR DEVICE

A semiconductor device includes a region of semiconductor material having a first side and a second side opposite to the first side. Active device structures are adjacent to the first side, the active device structures comprising source regions and gate electrodes. A first gate conductor is at the f...

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Bibliographische Detailangaben
1. Verfasser: GRIVNA, Gordon M
Format: Patent
Sprache:eng
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