Multi-Junction Pico-Avalanche Detector

The present relates to a multi-junction photon detector comprising a semiconductor substrate, a plurality of n+ pixels on the top surface and a p+ uniform doping implant on the backside and at least one n-doped layer on the backside, deeper in the substrate bulk than the p+ implant, such that the de...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VALERIO, Pierpaolo, IACOBUCCI, Giuseppe, PAOLOZZI, Lorenzo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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