CHEMICAL DIRECT PATTERN PLATING METHOD

A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a...

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Hauptverfasser:	Tsai, Ming-Hsing, Kao, Chen-Yuan, Su, Hung-Wen, Jang, Syun-Ming, LIU, Wen-Jiun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Tsai, Ming-Hsing Kao, Chen-Yuan Su, Hung-Wen Jang, Syun-Ming LIU, Wen-Jiun
description	A semiconductor structure with an improved metal structure is described. The semiconductor structure can include a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer can include a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. Methods of making the semiconductor structures are also described.
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title	CHEMICAL DIRECT PATTERN PLATING METHOD
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