SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a plurality of conductive layers, a semiconductor layer opposed to the plurality of conductive layers, and an electric charge accumulation portion disposed between the semiconductor layer and the plurality of conductive layers. The electric charge accumulation...
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| creator | KARIYA, Nayuta OGURA, Tatsuo KURUSU, Takashi TSUDA, Muneyuki TAKEDA, Hiroshi |
| description | A semiconductor memory device includes a plurality of conductive layers, a semiconductor layer opposed to the plurality of conductive layers, and an electric charge accumulation portion disposed between the semiconductor layer and the plurality of conductive layers. The electric charge accumulation portion includes a plurality of first electric charge accumulation portions opposed to the plurality of conductive layers, and a plurality of second electric charge accumulation portions disposed in positions different from the plurality of first electric charge accumulation portions. A distance between the first electric charge accumulation portion and the semiconductor layer is smaller than a distance between the second electric charge accumulation portion and the semiconductor layer. A distance between the second electric charge accumulation portion and the conductive layers is smaller than a distance between the first electric charge accumulation portion and the conductive layers. |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | SEMICONDUCTOR MEMORY DEVICE |
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