RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-POINT STRUCTURE AND METHOD OF OPERATING THE SAME

A memory device according to an embodiment includes a first interconnect, a second interconnect, a first variable resistance member, a third interconnect, a second variable resistance member, a fourth interconnect, a fifth interconnect and a third variable resistance member. The first interconnect,...

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Bibliographische Detailangaben

Hauptverfasser:	ARAYASHIKI, Yusuke, SUGIMAE, Kikuko
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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