POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

An object of the present disclosure is to suppress a shrinkage cavity without affecting the layout or the insulation performance of the semiconductor element in a power semiconductor device. A power semiconductor device includes a heat radiation plate; an insulating substrate bonded in a bonding reg...

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1. Verfasser:	SAKAI, Norikazu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SAKAI, Norikazu
description	An object of the present disclosure is to suppress a shrinkage cavity without affecting the layout or the insulation performance of the semiconductor element in a power semiconductor device. A power semiconductor device includes a heat radiation plate; an insulating substrate bonded in a bonding region on an upper surface of the heat radiation plate with a bonding material containing a plurality of elements having different solidification points; a semiconductor element mounted on an upper surface of the insulating substrate; and a bonding wire bonded in the bonding region on the upper surface of the heat radiation plate such that the bonding wire surrounds the semiconductor element in plan view.
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title	POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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