MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY

MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY

A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain grow...

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Hauptverfasser: Woo, Seonghoon, Gottwald, Matthias Georg
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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creator Woo, Seonghoon
Gottwald, Matthias Georg
description A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021249060A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021249060A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021249060A13</originalsourceid><addsrcrecordid>eNqNy7EKwjAQgOEuDqK-w4GzkEYROh5pbKPtJSRXoVMtEifRQn1_rCC4Ov3L98-TS81HCIzqBMoSoyFDBSCwdVBjQZqNAmeIdA4VttpDiecPCeztFKe905Qb1VTofweSCXYSrl0ms1t_H-Pq20WyPmhW5SYOzy6OQ3-Nj_jqmiCFTOUuE3uB6fY_9QZPhDR5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY</title><source>esp@cenet</source><creator>Woo, Seonghoon ; Gottwald, Matthias Georg</creator><creatorcontrib>Woo, Seonghoon ; Gottwald, Matthias Georg</creatorcontrib><description>A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210812&amp;DB=EPODOC&amp;CC=US&amp;NR=2021249060A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25573,76557</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210812&amp;DB=EPODOC&amp;CC=US&amp;NR=2021249060A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Woo, Seonghoon</creatorcontrib><creatorcontrib>Gottwald, Matthias Georg</creatorcontrib><title>MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY</title><description>A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAQgOEuDqK-w4GzkEYROh5pbKPtJSRXoVMtEifRQn1_rCC4Ov3L98-TS81HCIzqBMoSoyFDBSCwdVBjQZqNAmeIdA4VttpDiecPCeztFKe905Qb1VTofweSCXYSrl0ms1t_H-Pq20WyPmhW5SYOzy6OQ3-Nj_jqmiCFTOUuE3uB6fY_9QZPhDR5</recordid><startdate>20210812</startdate><enddate>20210812</enddate><creator>Woo, Seonghoon</creator><creator>Gottwald, Matthias Georg</creator><scope>EVB</scope></search><sort><creationdate>20210812</creationdate><title>MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY</title><author>Woo, Seonghoon ; Gottwald, Matthias Georg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021249060A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Woo, Seonghoon</creatorcontrib><creatorcontrib>Gottwald, Matthias Georg</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Woo, Seonghoon</au><au>Gottwald, Matthias Georg</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY</title><date>2021-08-12</date><risdate>2021</risdate><abstract>A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-11-29T14%3A38%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Woo,%20Seonghoon&rft.date=2021-08-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021249060A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true