MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY

MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERPENDICULAR MAGNETIC ANISOTROPY

A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain grow...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Woo, Seonghoon, Gottwald, Matthias Georg
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.