THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS
A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHOI, Youngjin HA, Jonghoon TAK, Youngjo SEO, Jonguk CHOI, Yongseok LEE, Jeongwook AHN, Sungjin KIM, Joosung LEE, Donggun |
| description | A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021242369A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021242369A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021242369A13</originalsourceid><addsrcrecordid>eNqNi8EKwjAQRHPxIOo_LHgWbCqCx6VZ20CahGSD9FSKxJNoof4_5uAHeJp5w5u1uHEXiEDpnmzUzqIxA0QOqeEUSEGkXjfOqsIugNFtx1AmZm3b8nKKAK0qLXqDA6D3GJBT3IrVY3oueffLjdhfiZvukOf3mJd5uudX_owpyqOs5EnW5wtW9X_WF9RHMmw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS</title><source>esp@cenet</source><creator>CHOI, Youngjin ; HA, Jonghoon ; TAK, Youngjo ; SEO, Jonguk ; CHOI, Yongseok ; LEE, Jeongwook ; AHN, Sungjin ; KIM, Joosung ; LEE, Donggun</creator><creatorcontrib>CHOI, Youngjin ; HA, Jonghoon ; TAK, Youngjo ; SEO, Jonguk ; CHOI, Yongseok ; LEE, Jeongwook ; AHN, Sungjin ; KIM, Joosung ; LEE, Donggun</creatorcontrib><description>A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210805&DB=EPODOC&CC=US&NR=2021242369A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210805&DB=EPODOC&CC=US&NR=2021242369A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOI, Youngjin</creatorcontrib><creatorcontrib>HA, Jonghoon</creatorcontrib><creatorcontrib>TAK, Youngjo</creatorcontrib><creatorcontrib>SEO, Jonguk</creatorcontrib><creatorcontrib>CHOI, Yongseok</creatorcontrib><creatorcontrib>LEE, Jeongwook</creatorcontrib><creatorcontrib>AHN, Sungjin</creatorcontrib><creatorcontrib>KIM, Joosung</creatorcontrib><creatorcontrib>LEE, Donggun</creatorcontrib><title>THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS</title><description>A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi8EKwjAQRHPxIOo_LHgWbCqCx6VZ20CahGSD9FSKxJNoof4_5uAHeJp5w5u1uHEXiEDpnmzUzqIxA0QOqeEUSEGkXjfOqsIugNFtx1AmZm3b8nKKAK0qLXqDA6D3GJBT3IrVY3oueffLjdhfiZvukOf3mJd5uudX_owpyqOs5EnW5wtW9X_WF9RHMmw</recordid><startdate>20210805</startdate><enddate>20210805</enddate><creator>CHOI, Youngjin</creator><creator>HA, Jonghoon</creator><creator>TAK, Youngjo</creator><creator>SEO, Jonguk</creator><creator>CHOI, Yongseok</creator><creator>LEE, Jeongwook</creator><creator>AHN, Sungjin</creator><creator>KIM, Joosung</creator><creator>LEE, Donggun</creator><scope>EVB</scope></search><sort><creationdate>20210805</creationdate><title>THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS</title><author>CHOI, Youngjin ; HA, Jonghoon ; TAK, Youngjo ; SEO, Jonguk ; CHOI, Yongseok ; LEE, Jeongwook ; AHN, Sungjin ; KIM, Joosung ; LEE, Donggun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021242369A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOI, Youngjin</creatorcontrib><creatorcontrib>HA, Jonghoon</creatorcontrib><creatorcontrib>TAK, Youngjo</creatorcontrib><creatorcontrib>SEO, Jonguk</creatorcontrib><creatorcontrib>CHOI, Yongseok</creatorcontrib><creatorcontrib>LEE, Jeongwook</creatorcontrib><creatorcontrib>AHN, Sungjin</creatorcontrib><creatorcontrib>KIM, Joosung</creatorcontrib><creatorcontrib>LEE, Donggun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOI, Youngjin</au><au>HA, Jonghoon</au><au>TAK, Youngjo</au><au>SEO, Jonguk</au><au>CHOI, Yongseok</au><au>LEE, Jeongwook</au><au>AHN, Sungjin</au><au>KIM, Joosung</au><au>LEE, Donggun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS</title><date>2021-08-05</date><risdate>2021</risdate><abstract>A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2021242369A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | THREE DIMENSIONALLY STRUCTURED SEMICONDUCTOR LIGHT EMITTING DIODE AND DISPLAY APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T23%3A43%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHOI,%20Youngjin&rft.date=2021-08-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021242369A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |