METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT BASIC UNIT

A MOS integrated circuit basic unit includes: a drain semiconductor region; a lightly doped drain region; a channel semiconductor region; a source semiconductor region; a source electrode; a gate electrode; a gate dielectric layer; and a drain electrode. The drain semiconductor region is the bottom...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FENG, Ke, TANG, Ruifeng, LIAO, Yongbo, NIE, Ruihong, ZENG, Xianghe, LI, Ping, HU, Zhaoxi, LIN, Fan, PENG, Chenxi, LI, Yaosen, ZOU, Jiarui
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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