WIRING STRUCTURES AND VERTICAL MEMORY DEVICES INCLUDING THE SAME

WIRING STRUCTURES AND VERTICAL MEMORY DEVICES INCLUDING THE SAME

A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second d...

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Hauptverfasser: Park, Honyun, Lee, Jeonggil, Lee, Chanyang, Kim, Sukhoon, Park, Sungmyong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Park, Honyun
Lee, Jeonggil
Lee, Chanyang
Kim, Sukhoon
Park, Sungmyong
description A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title WIRING STRUCTURES AND VERTICAL MEMORY DEVICES INCLUDING THE SAME
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