MAGNETORESISTIVE MEMORY DEVICE INCLUDING A REFERENCE LAYER SIDE DIELECTRIC SPACER LAYER

A memory device includes a first electrode, a second electrode that is spaced from the first electrode, a fixed vertical magnetization structure configured to generate a fixed vertical magnetic field and located between the first electrode and the second electrode, at least one layer stack located b...

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Bibliographische Detailangaben

Hauptverfasser:	PRASAD, Bhagwati, MIHAJLOVIC, Goran, JUNG, Wonjoon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TESTING TRANSFORMERS
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