APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE
Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is...
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| creator | Puthoor, Aneesh Ravimohan, Narendhiran Chinnaanangur Singh, Harvijay |
| description | Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021210157A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021210157A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021210157A13</originalsourceid><addsrcrecordid>eNrjZAh2DAhwDHIMCQ1WcPRzUfB1DfHwd1Fw8w9S8ADyfTz93BVCXH0DXEFKglwVXFwDXP1cXP1CFNwcPX2AIsEKnn4KjkB9vv5BkUDpME9nVx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGhkaGBoau5oaEycKgCpvDCK</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE</title><source>esp@cenet</source><creator>Puthoor, Aneesh ; Ravimohan, Narendhiran Chinnaanangur ; Singh, Harvijay</creator><creatorcontrib>Puthoor, Aneesh ; Ravimohan, Narendhiran Chinnaanangur ; Singh, Harvijay</creatorcontrib><description>Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210708&DB=EPODOC&CC=US&NR=2021210157A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210708&DB=EPODOC&CC=US&NR=2021210157A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Puthoor, Aneesh</creatorcontrib><creatorcontrib>Ravimohan, Narendhiran Chinnaanangur</creatorcontrib><creatorcontrib>Singh, Harvijay</creatorcontrib><title>APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE</title><description>Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAh2DAhwDHIMCQ1WcPRzUfB1DfHwd1Fw8w9S8ADyfTz93BVCXH0DXEFKglwVXFwDXP1cXP1CFNwcPX2AIsEKnn4KjkB9vv5BkUDpME9nVx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgZGhkaGBoau5oaEycKgCpvDCK</recordid><startdate>20210708</startdate><enddate>20210708</enddate><creator>Puthoor, Aneesh</creator><creator>Ravimohan, Narendhiran Chinnaanangur</creator><creator>Singh, Harvijay</creator><scope>EVB</scope></search><sort><creationdate>20210708</creationdate><title>APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE</title><author>Puthoor, Aneesh ; Ravimohan, Narendhiran Chinnaanangur ; Singh, Harvijay</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021210157A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Puthoor, Aneesh</creatorcontrib><creatorcontrib>Ravimohan, Narendhiran Chinnaanangur</creatorcontrib><creatorcontrib>Singh, Harvijay</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Puthoor, Aneesh</au><au>Ravimohan, Narendhiran Chinnaanangur</au><au>Singh, Harvijay</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE</title><date>2021-07-08</date><risdate>2021</risdate><abstract>Devices, methods, and systems for managing temperature dependent failures in a memory device. An erase failure of a memory block is detected, and marked as a grown bad block if the memory device temperature is below a threshold temperature. If the temperature exceeds the threshold temperature, it is determined whether memory cells of the block exceed a first threshold voltage. If the memory cells of the block exceed the first threshold voltage, the block is marked as a potential grown bad block. If the memory cells of the block are below the first threshold voltage, it is determined whether a number of the memory cells of the block exceed a second threshold voltage. If the memory cells of the block are below the second threshold, the block is programmed. If the memory cells of the block exceed the second threshold, the block is marked for error correction and programmed.</abstract><oa>free_for_read</oa></addata></record> |
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| title | APPARATUS AND METHOD FOR HANDLING TEMPERATURE DEPENDENT FAILURES IN A MEMORY DEVICE |
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