REFLECTIVE TYPE BLANKMASK AND PHOTOMASK FOR EUV

Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer co...

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Hauptverfasser: LEE, Jong-Hwa, YANG, Chul-Kyu, KONG, Gil-Woo, SHIN, Cheol
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creator LEE, Jong-Hwa
YANG, Chul-Kyu
KONG, Gil-Woo
SHIN, Cheol
description Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title REFLECTIVE TYPE BLANKMASK AND PHOTOMASK FOR EUV
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