Semiconductor Device Having Hydrogen in a Dielectric Layer

Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Peng, Chun-Yen, Chau, Cheng-Po, Chen, Yi-Fan, Ku, Wen-Yu, Chang, Huicheng, Luan, Hongfa
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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