PLASMA PROCESSING METHOD, AND ELEMENT CHIP MANUFACTURING METHOD

PLASMA PROCESSING METHOD, AND ELEMENT CHIP MANUFACTURING METHOD

A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal...

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Hauptverfasser: HARIKAI, Atsushi, OKITA, Shogo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HARIKAI, Atsushi
OKITA, Shogo
description A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal process includes a plurality of cycles, each cycle including: an oxide film etching step of etching the oxide film; and a cleaning step of removing an attached matter on inner walls of the trenches, after the oxide film etching step.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PLASMA PROCESSING METHOD, AND ELEMENT CHIP MANUFACTURING METHOD
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