SUBSTRATE PROCESSING METHOD
A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the sub...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | CHUN, Jin Sung CHO, Byung Chul JIN, Kwang Seon KWON, Jun Hyuck PARK, Sang Jun |
description | A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021193472A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021193472A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021193472A13</originalsourceid><addsrcrecordid>eNrjZJAODnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkaGhpbGJuZGjobGxKkCAO6EIa8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING METHOD</title><source>esp@cenet</source><creator>CHUN, Jin Sung ; CHO, Byung Chul ; JIN, Kwang Seon ; KWON, Jun Hyuck ; PARK, Sang Jun</creator><creatorcontrib>CHUN, Jin Sung ; CHO, Byung Chul ; JIN, Kwang Seon ; KWON, Jun Hyuck ; PARK, Sang Jun</creatorcontrib><description>A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=US&NR=2021193472A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=US&NR=2021193472A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHUN, Jin Sung</creatorcontrib><creatorcontrib>CHO, Byung Chul</creatorcontrib><creatorcontrib>JIN, Kwang Seon</creatorcontrib><creatorcontrib>KWON, Jun Hyuck</creatorcontrib><creatorcontrib>PARK, Sang Jun</creatorcontrib><title>SUBSTRATE PROCESSING METHOD</title><description>A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAODnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkaGhpbGJuZGjobGxKkCAO6EIa8</recordid><startdate>20210624</startdate><enddate>20210624</enddate><creator>CHUN, Jin Sung</creator><creator>CHO, Byung Chul</creator><creator>JIN, Kwang Seon</creator><creator>KWON, Jun Hyuck</creator><creator>PARK, Sang Jun</creator><scope>EVB</scope></search><sort><creationdate>20210624</creationdate><title>SUBSTRATE PROCESSING METHOD</title><author>CHUN, Jin Sung ; CHO, Byung Chul ; JIN, Kwang Seon ; KWON, Jun Hyuck ; PARK, Sang Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021193472A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHUN, Jin Sung</creatorcontrib><creatorcontrib>CHO, Byung Chul</creatorcontrib><creatorcontrib>JIN, Kwang Seon</creatorcontrib><creatorcontrib>KWON, Jun Hyuck</creatorcontrib><creatorcontrib>PARK, Sang Jun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHUN, Jin Sung</au><au>CHO, Byung Chul</au><au>JIN, Kwang Seon</au><au>KWON, Jun Hyuck</au><au>PARK, Sang Jun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING METHOD</title><date>2021-06-24</date><risdate>2021</risdate><abstract>A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2021193472A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SUBSTRATE PROCESSING METHOD |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T01%3A21%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHUN,%20Jin%20Sung&rft.date=2021-06-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021193472A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |