NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	PARK, Jong-chul, LEE, Youn-yeol, LIM, Kyung-sub, LEE, Seul-bee
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	PARK, Jong-chul LEE, Youn-yeol LIM, Kyung-sub LEE, Seul-bee
description	An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021193225A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021193225A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021193225A13</originalsourceid><addsrcrecordid>eNrjZLDy8_cL8_dxDPH0cVXwdfX1D4pUcHEN83R2VXD0c1HwD3ANAsr5uQPlQjz8gQJuCiEergrBjr6uPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI0NDS2MjI1NHQmDhVAEqjKbg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME</title><source>esp@cenet</source><creator>PARK, Jong-chul ; LEE, Youn-yeol ; LIM, Kyung-sub ; LEE, Seul-bee</creator><creatorcontrib>PARK, Jong-chul ; LEE, Youn-yeol ; LIM, Kyung-sub ; LEE, Seul-bee</creatorcontrib><description>An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=US&NR=2021193225A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210624&DB=EPODOC&CC=US&NR=2021193225A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, Jong-chul</creatorcontrib><creatorcontrib>LEE, Youn-yeol</creatorcontrib><creatorcontrib>LIM, Kyung-sub</creatorcontrib><creatorcontrib>LEE, Seul-bee</creatorcontrib><title>NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME</title><description>An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDy8_cL8_dxDPH0cVXwdfX1D4pUcHEN83R2VXD0c1HwD3ANAsr5uQPlQjz8gQJuCiEergrBjr6uPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI0NDS2MjI1NHQmDhVAEqjKbg</recordid><startdate>20210624</startdate><enddate>20210624</enddate><creator>PARK, Jong-chul</creator><creator>LEE, Youn-yeol</creator><creator>LIM, Kyung-sub</creator><creator>LEE, Seul-bee</creator><scope>EVB</scope></search><sort><creationdate>20210624</creationdate><title>NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME</title><author>PARK, Jong-chul ; LEE, Youn-yeol ; LIM, Kyung-sub ; LEE, Seul-bee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021193225A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK, Jong-chul</creatorcontrib><creatorcontrib>LEE, Youn-yeol</creatorcontrib><creatorcontrib>LIM, Kyung-sub</creatorcontrib><creatorcontrib>LEE, Seul-bee</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK, Jong-chul</au><au>LEE, Youn-yeol</au><au>LIM, Kyung-sub</au><au>LEE, Seul-bee</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME</title><date>2021-06-24</date><risdate>2021</risdate><abstract>An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US2021193225A1
source	esp@cenet
subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T21%3A31%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PARK,%20Jong-chul&rft.date=2021-06-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021193225A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true