SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER

The present invention is a method of producing a silicon single crystal, including pulling a silicon single crystal by Czochralski method while a magnetic field is applied to a raw material melt, including: setting a diameter on pulling the silicon single crystal to 300 mm or more, setting a growth...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Sugawara, Kosei, Hoshi, Ryoji
Format: Patent
Sprache:eng
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