DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE

A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the...

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Hauptverfasser: An, Ju Jin, Gruszecki, Craig R, Van Kleeck, Todd J, McGahay, Vincent J, Lee, Tim H
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Gruszecki, Craig R
Van Kleeck, Todd J
McGahay, Vincent J
Lee, Tim H
description A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021175166A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021175166A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021175166A13</originalsourceid><addsrcrecordid>eNrjZLB2CXX0UXDxdPVxdQ4J8nRW8HGMdA1ScPMPUnD28Q_29HNXCHZ19FXw9FNw9AxScHcMUAgOCQp1DgkNcuVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRoaG5qaGZmaOhsbEqQIAV80p5w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE</title><source>esp@cenet</source><creator>An, Ju Jin ; Gruszecki, Craig R ; Van Kleeck, Todd J ; McGahay, Vincent J ; Lee, Tim H</creator><creatorcontrib>An, Ju Jin ; Gruszecki, Craig R ; Van Kleeck, Todd J ; McGahay, Vincent J ; Lee, Tim H</creatorcontrib><description>A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210610&amp;DB=EPODOC&amp;CC=US&amp;NR=2021175166A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210610&amp;DB=EPODOC&amp;CC=US&amp;NR=2021175166A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>An, Ju Jin</creatorcontrib><creatorcontrib>Gruszecki, Craig R</creatorcontrib><creatorcontrib>Van Kleeck, Todd J</creatorcontrib><creatorcontrib>McGahay, Vincent J</creatorcontrib><creatorcontrib>Lee, Tim H</creatorcontrib><title>DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE</title><description>A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2CXX0UXDxdPVxdQ4J8nRW8HGMdA1ScPMPUnD28Q_29HNXCHZ19FXw9FNw9AxScHcMUAgOCQp1DgkNcuVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRoaG5qaGZmaOhsbEqQIAV80p5w</recordid><startdate>20210610</startdate><enddate>20210610</enddate><creator>An, Ju Jin</creator><creator>Gruszecki, Craig R</creator><creator>Van Kleeck, Todd J</creator><creator>McGahay, Vincent J</creator><creator>Lee, Tim H</creator><scope>EVB</scope></search><sort><creationdate>20210610</creationdate><title>DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE</title><author>An, Ju Jin ; Gruszecki, Craig R ; Van Kleeck, Todd J ; McGahay, Vincent J ; Lee, Tim H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021175166A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>An, Ju Jin</creatorcontrib><creatorcontrib>Gruszecki, Craig R</creatorcontrib><creatorcontrib>Van Kleeck, Todd J</creatorcontrib><creatorcontrib>McGahay, Vincent J</creatorcontrib><creatorcontrib>Lee, Tim H</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>An, Ju Jin</au><au>Gruszecki, Craig R</au><au>Van Kleeck, Todd J</au><au>McGahay, Vincent J</au><au>Lee, Tim H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE</title><date>2021-06-10</date><risdate>2021</risdate><abstract>A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title DUAL DIELECTRIC LAYER FOR CLOSING SEAM IN AIR GAP STRUCTURE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T07%3A57%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=An,%20Ju%20Jin&rft.date=2021-06-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021175166A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true