SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure include...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | SAKONG, Tan SEO, Jonguk JO, Suhyun KIM, Juhyun YANG, Jongin KIM, Yongil |
description | Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021159365A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021159365A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021159365A13</originalsourceid><addsrcrecordid>eNrjZHALdvX1dPb3cwl1DvEPUvDxdPcIUQAKhYR4-rkruLiGeTq7Kjj6uSj4uoZ4-Lso-LspuDk6BXk6O4IVhHi4KgQ7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNDQ1NLYzNTR0Nj4lQBAEfiLPc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME</title><source>esp@cenet</source><creator>SAKONG, Tan ; SEO, Jonguk ; JO, Suhyun ; KIM, Juhyun ; YANG, Jongin ; KIM, Yongil</creator><creatorcontrib>SAKONG, Tan ; SEO, Jonguk ; JO, Suhyun ; KIM, Juhyun ; YANG, Jongin ; KIM, Yongil</creatorcontrib><description>Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210527&DB=EPODOC&CC=US&NR=2021159365A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210527&DB=EPODOC&CC=US&NR=2021159365A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAKONG, Tan</creatorcontrib><creatorcontrib>SEO, Jonguk</creatorcontrib><creatorcontrib>JO, Suhyun</creatorcontrib><creatorcontrib>KIM, Juhyun</creatorcontrib><creatorcontrib>YANG, Jongin</creatorcontrib><creatorcontrib>KIM, Yongil</creatorcontrib><title>SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME</title><description>Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHALdvX1dPb3cwl1DvEPUvDxdPcIUQAKhYR4-rkruLiGeTq7Kjj6uSj4uoZ4-Lso-LspuDk6BXk6O4IVhHi4KgQ7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNDQ1NLYzNTR0Nj4lQBAEfiLPc</recordid><startdate>20210527</startdate><enddate>20210527</enddate><creator>SAKONG, Tan</creator><creator>SEO, Jonguk</creator><creator>JO, Suhyun</creator><creator>KIM, Juhyun</creator><creator>YANG, Jongin</creator><creator>KIM, Yongil</creator><scope>EVB</scope></search><sort><creationdate>20210527</creationdate><title>SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME</title><author>SAKONG, Tan ; SEO, Jonguk ; JO, Suhyun ; KIM, Juhyun ; YANG, Jongin ; KIM, Yongil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021159365A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SAKONG, Tan</creatorcontrib><creatorcontrib>SEO, Jonguk</creatorcontrib><creatorcontrib>JO, Suhyun</creatorcontrib><creatorcontrib>KIM, Juhyun</creatorcontrib><creatorcontrib>YANG, Jongin</creatorcontrib><creatorcontrib>KIM, Yongil</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAKONG, Tan</au><au>SEO, Jonguk</au><au>JO, Suhyun</au><au>KIM, Juhyun</au><au>YANG, Jongin</au><au>KIM, Yongil</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME</title><date>2021-05-27</date><risdate>2021</risdate><abstract>Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2021159365A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T00%3A33%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SAKONG,%20Tan&rft.date=2021-05-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021159365A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |