SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is dispos...

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Hauptverfasser:	ZHANG, JINHAN, ZHOU, CHUNHUA, WONG, KINGYUEN, CHANG, MING-HONG, CHIU, HANIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	ZHANG, JINHAN ZHOU, CHUNHUA WONG, KINGYUEN CHANG, MING-HONG CHIU, HANIN
description	A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021151594A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021151594A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021151594A13</originalsourceid><addsrcrecordid>eNrjZLAOdvX1dPb3cwl1DvEPUnBxDfN0dg1WcPRzUfB1DfHwdwlW8HdT8HX0C3VzdA4JDfL0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRoaGpoamliaOhsbEqQIAgioqKw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>ZHANG, JINHAN ; ZHOU, CHUNHUA ; WONG, KINGYUEN ; CHANG, MING-HONG ; CHIU, HANIN</creator><creatorcontrib>ZHANG, JINHAN ; ZHOU, CHUNHUA ; WONG, KINGYUEN ; CHANG, MING-HONG ; CHIU, HANIN</creatorcontrib><description>A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210520&DB=EPODOC&CC=US&NR=2021151594A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210520&DB=EPODOC&CC=US&NR=2021151594A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG, JINHAN</creatorcontrib><creatorcontrib>ZHOU, CHUNHUA</creatorcontrib><creatorcontrib>WONG, KINGYUEN</creatorcontrib><creatorcontrib>CHANG, MING-HONG</creatorcontrib><creatorcontrib>CHIU, HANIN</creatorcontrib><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><description>A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOdvX1dPb3cwl1DvEPUnBxDfN0dg1WcPRzUfB1DfHwdwlW8HdT8HX0C3VzdA4JDfL0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRoaGpoamliaOhsbEqQIAgioqKw</recordid><startdate>20210520</startdate><enddate>20210520</enddate><creator>ZHANG, JINHAN</creator><creator>ZHOU, CHUNHUA</creator><creator>WONG, KINGYUEN</creator><creator>CHANG, MING-HONG</creator><creator>CHIU, HANIN</creator><scope>EVB</scope></search><sort><creationdate>20210520</creationdate><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><author>ZHANG, JINHAN ; ZHOU, CHUNHUA ; WONG, KINGYUEN ; CHANG, MING-HONG ; CHIU, HANIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021151594A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG, JINHAN</creatorcontrib><creatorcontrib>ZHOU, CHUNHUA</creatorcontrib><creatorcontrib>WONG, KINGYUEN</creatorcontrib><creatorcontrib>CHANG, MING-HONG</creatorcontrib><creatorcontrib>CHIU, HANIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG, JINHAN</au><au>ZHOU, CHUNHUA</au><au>WONG, KINGYUEN</au><au>CHANG, MING-HONG</au><au>CHIU, HANIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME</title><date>2021-05-20</date><risdate>2021</risdate><abstract>A semiconductor device includes a substrate, a channel layer, a barrier layer, a gate, a strained layer and a passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate is disposed on the barrier layer. The strained layer is disposed on the barrier layer. The passivation layer covers the gate and the strained layer. The material of the passivation layer differs from that of the strained layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T14%3A24%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHANG,%20JINHAN&rft.date=2021-05-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021151594A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true