INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE
An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth...
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| creator | JUNG, Hak Chul YOU, Hyeon Gyu YANG, Gi Young YU, Ji Su LIM, Jin Young KIM, In Gyum |
| description | An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers. |
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A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=US&NR=2021134837A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=US&NR=2021134837A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUNG, Hak Chul</creatorcontrib><creatorcontrib>YOU, Hyeon Gyu</creatorcontrib><creatorcontrib>YANG, Gi Young</creatorcontrib><creatorcontrib>YU, Ji Su</creatorcontrib><creatorcontrib>LIM, Jin Young</creatorcontrib><creatorcontrib>KIM, In Gyum</creatorcontrib><title>INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE</title><description>An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD39AtxdQ9yDHF1UXD2DHIO9QxR8PRz9gl18fRzV0CSDA5x9HNxDAKqcvXxAfKCQp1DQoNceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRoaGxiYWxuaOhMXGqAEzmK5g</recordid><startdate>20210506</startdate><enddate>20210506</enddate><creator>JUNG, Hak Chul</creator><creator>YOU, Hyeon Gyu</creator><creator>YANG, Gi Young</creator><creator>YU, Ji Su</creator><creator>LIM, Jin Young</creator><creator>KIM, In Gyum</creator><scope>EVB</scope></search><sort><creationdate>20210506</creationdate><title>INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE</title><author>JUNG, Hak Chul ; YOU, Hyeon Gyu ; YANG, Gi Young ; YU, Ji Su ; LIM, Jin Young ; KIM, In Gyum</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021134837A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG, Hak Chul</creatorcontrib><creatorcontrib>YOU, Hyeon Gyu</creatorcontrib><creatorcontrib>YANG, Gi Young</creatorcontrib><creatorcontrib>YU, Ji Su</creatorcontrib><creatorcontrib>LIM, Jin Young</creatorcontrib><creatorcontrib>KIM, In Gyum</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUNG, Hak Chul</au><au>YOU, Hyeon Gyu</au><au>YANG, Gi Young</au><au>YU, Ji Su</au><au>LIM, Jin Young</au><au>KIM, In Gyum</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE</title><date>2021-05-06</date><risdate>2021</risdate><abstract>An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE |
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