BACKSIDE METALLIZED COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed wi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEI, Houng-Chi, KUO, Chia-Chu, LIN, Kechuang, CHUANG, Bing-Han, CHIU, Tsung-Te
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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