SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE
Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trenc...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Jain, Vibhor Adusumilli, Siva P Ellis-Monaghan, John J |
description | Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trench. A first portion of a dielectric layer is located in the first trench and a second portion of the dielectric layer is located in the second trench. A waveguide core is coupled to the pillar at a top surface of the substrate. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021132461A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021132461A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021132461A13</originalsourceid><addsrcrecordid>eNrjZLAN9vTxdPb3Uwjw8A_x9_N0VnD29w3w93P1CwlWcHN0CvJ0dgxxdVEIDfb0c1dwVHAK9fFWCA51Cg4JAorzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNDQ2MjEzNDR0Nj4lQBAOkEKtY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE</title><source>esp@cenet</source><creator>Jain, Vibhor ; Adusumilli, Siva P ; Ellis-Monaghan, John J</creator><creatorcontrib>Jain, Vibhor ; Adusumilli, Siva P ; Ellis-Monaghan, John J</creatorcontrib><description>Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trench. A first portion of a dielectric layer is located in the first trench and a second portion of the dielectric layer is located in the second trench. A waveguide core is coupled to the pillar at a top surface of the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=US&NR=2021132461A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=US&NR=2021132461A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jain, Vibhor</creatorcontrib><creatorcontrib>Adusumilli, Siva P</creatorcontrib><creatorcontrib>Ellis-Monaghan, John J</creatorcontrib><title>SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE</title><description>Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trench. A first portion of a dielectric layer is located in the first trench and a second portion of the dielectric layer is located in the second trench. A waveguide core is coupled to the pillar at a top surface of the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAN9vTxdPb3Uwjw8A_x9_N0VnD29w3w93P1CwlWcHN0CvJ0dgxxdVEIDfb0c1dwVHAK9fFWCA51Cg4JAorzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNDQ2MjEzNDR0Nj4lQBAOkEKtY</recordid><startdate>20210506</startdate><enddate>20210506</enddate><creator>Jain, Vibhor</creator><creator>Adusumilli, Siva P</creator><creator>Ellis-Monaghan, John J</creator><scope>EVB</scope></search><sort><creationdate>20210506</creationdate><title>SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE</title><author>Jain, Vibhor ; Adusumilli, Siva P ; Ellis-Monaghan, John J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021132461A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>Jain, Vibhor</creatorcontrib><creatorcontrib>Adusumilli, Siva P</creatorcontrib><creatorcontrib>Ellis-Monaghan, John J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jain, Vibhor</au><au>Adusumilli, Siva P</au><au>Ellis-Monaghan, John J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE</title><date>2021-05-06</date><risdate>2021</risdate><abstract>Structures including a photodetector and methods of fabricating such structures. A substrate, which is composed of a semiconductor material, includes a first trench, a second trench, and a pillar of the semiconductor material that is laterally positioned between the first trench and the second trench. A first portion of a dielectric layer is located in the first trench and a second portion of the dielectric layer is located in the second trench. A waveguide core is coupled to the pillar at a top surface of the substrate.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2021132461A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | SILICON PHOTONIC COMPONENTS FABRICATED USING A BULK SUBSTRATE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T13%3A19%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jain,%20Vibhor&rft.date=2021-05-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021132461A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |