INSULATION PROTECTION STRUCTURE
An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film....
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| creator | LI, FENG JU CHIN, HUNGIEH CHEN, PO-LIN XIE, DONG-SHENG WU, GANG LEE, HUNG CHIEN |
| description | An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film. The insulating cement layer comprises at least one surface facing inward the chip outline, retracted toward the direction of the chip outline and forms a retracted region along at least one side of the sensor film. Area of the proposed retracted region is preferably no more than 20% of that of the total insulating cement layer, and the conventional issues such as sulphide corrosion are solved. The proposed insulating cement layer can be cured merely at room temperature, and widely used for adhesive materials including both a gel and film, thus characterized by wider application range and better industrial applicability. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021112665A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021112665A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021112665A13</originalsourceid><addsrcrecordid>eNrjZJD39AsO9XEM8fT3UwgI8g9xdQYzg0OCQp1DQoNceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRoaGhkZmZqaOhMXGqAJLdIww</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INSULATION PROTECTION STRUCTURE</title><source>esp@cenet</source><creator>LI, FENG JU ; CHIN, HUNGIEH ; CHEN, PO-LIN ; XIE, DONG-SHENG ; WU, GANG ; LEE, HUNG CHIEN</creator><creatorcontrib>LI, FENG JU ; CHIN, HUNGIEH ; CHEN, PO-LIN ; XIE, DONG-SHENG ; WU, GANG ; LEE, HUNG CHIEN</creatorcontrib><description>An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film. The insulating cement layer comprises at least one surface facing inward the chip outline, retracted toward the direction of the chip outline and forms a retracted region along at least one side of the sensor film. Area of the proposed retracted region is preferably no more than 20% of that of the total insulating cement layer, and the conventional issues such as sulphide corrosion are solved. The proposed insulating cement layer can be cured merely at room temperature, and widely used for adhesive materials including both a gel and film, thus characterized by wider application range and better industrial applicability.</description><language>eng</language><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; PRINTED CIRCUITS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210415&DB=EPODOC&CC=US&NR=2021112665A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210415&DB=EPODOC&CC=US&NR=2021112665A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI, FENG JU</creatorcontrib><creatorcontrib>CHIN, HUNGIEH</creatorcontrib><creatorcontrib>CHEN, PO-LIN</creatorcontrib><creatorcontrib>XIE, DONG-SHENG</creatorcontrib><creatorcontrib>WU, GANG</creatorcontrib><creatorcontrib>LEE, HUNG CHIEN</creatorcontrib><title>INSULATION PROTECTION STRUCTURE</title><description>An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film. The insulating cement layer comprises at least one surface facing inward the chip outline, retracted toward the direction of the chip outline and forms a retracted region along at least one side of the sensor film. Area of the proposed retracted region is preferably no more than 20% of that of the total insulating cement layer, and the conventional issues such as sulphide corrosion are solved. The proposed insulating cement layer can be cured merely at room temperature, and widely used for adhesive materials including both a gel and film, thus characterized by wider application range and better industrial applicability.</description><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>PRINTED CIRCUITS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD39AsO9XEM8fT3UwgI8g9xdQYzg0OCQp1DQoNceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRoaGhkZmZqaOhMXGqAJLdIww</recordid><startdate>20210415</startdate><enddate>20210415</enddate><creator>LI, FENG JU</creator><creator>CHIN, HUNGIEH</creator><creator>CHEN, PO-LIN</creator><creator>XIE, DONG-SHENG</creator><creator>WU, GANG</creator><creator>LEE, HUNG CHIEN</creator><scope>EVB</scope></search><sort><creationdate>20210415</creationdate><title>INSULATION PROTECTION STRUCTURE</title><author>LI, FENG JU ; CHIN, HUNGIEH ; CHEN, PO-LIN ; XIE, DONG-SHENG ; WU, GANG ; LEE, HUNG CHIEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021112665A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>PRINTED CIRCUITS</topic><toplevel>online_resources</toplevel><creatorcontrib>LI, FENG JU</creatorcontrib><creatorcontrib>CHIN, HUNGIEH</creatorcontrib><creatorcontrib>CHEN, PO-LIN</creatorcontrib><creatorcontrib>XIE, DONG-SHENG</creatorcontrib><creatorcontrib>WU, GANG</creatorcontrib><creatorcontrib>LEE, HUNG CHIEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI, FENG JU</au><au>CHIN, HUNGIEH</au><au>CHEN, PO-LIN</au><au>XIE, DONG-SHENG</au><au>WU, GANG</au><au>LEE, HUNG CHIEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INSULATION PROTECTION STRUCTURE</title><date>2021-04-15</date><risdate>2021</risdate><abstract>An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film. The insulating cement layer comprises at least one surface facing inward the chip outline, retracted toward the direction of the chip outline and forms a retracted region along at least one side of the sensor film. Area of the proposed retracted region is preferably no more than 20% of that of the total insulating cement layer, and the conventional issues such as sulphide corrosion are solved. The proposed insulating cement layer can be cured merely at room temperature, and widely used for adhesive materials including both a gel and film, thus characterized by wider application range and better industrial applicability.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS |
| title | INSULATION PROTECTION STRUCTURE |
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