CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second...
Gespeichert in:
Hauptverfasser: | , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | LEE, HYOSAN HAN, Sol KIM, Tae-Hong KIM, INGI OH, Jung-Min KIM, YUNGJUN YOON, BOUN KIM, Chae Lyoung |
description | A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021098261A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021098261A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021098261A13</originalsourceid><addsrcrecordid>eNqNjcEKwjAQRHvxIOo_LHitYCuIHpfN1gSapDSJ4KkUiSdRQX_R_9KI3kQ8zTL7ZmaY3almNMpsAJsGW_TB5UCStSKsQTPJ5zedja2Vkwl0O-dZgzJUB5EMLxkcan4GP2WavbQCsPLc_q7LAY348LYCjSZUSD60r62UtEYE8rYFwVtF_GV5nA0O_fEaJ28dZdOKPclZvJy7eL30-3iKty64cl4W8_WqXBZYLP6jHvljT3E</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><source>esp@cenet</source><creator>LEE, HYOSAN ; HAN, Sol ; KIM, Tae-Hong ; KIM, INGI ; OH, Jung-Min ; KIM, YUNGJUN ; YOON, BOUN ; KIM, Chae Lyoung</creator><creatorcontrib>LEE, HYOSAN ; HAN, Sol ; KIM, Tae-Hong ; KIM, INGI ; OH, Jung-Min ; KIM, YUNGJUN ; YOON, BOUN ; KIM, Chae Lyoung</creatorcontrib><description>A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210401&DB=EPODOC&CC=US&NR=2021098261A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210401&DB=EPODOC&CC=US&NR=2021098261A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, HYOSAN</creatorcontrib><creatorcontrib>HAN, Sol</creatorcontrib><creatorcontrib>KIM, Tae-Hong</creatorcontrib><creatorcontrib>KIM, INGI</creatorcontrib><creatorcontrib>OH, Jung-Min</creatorcontrib><creatorcontrib>KIM, YUNGJUN</creatorcontrib><creatorcontrib>YOON, BOUN</creatorcontrib><creatorcontrib>KIM, Chae Lyoung</creatorcontrib><title>CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><description>A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjcEKwjAQRHvxIOo_LHitYCuIHpfN1gSapDSJ4KkUiSdRQX_R_9KI3kQ8zTL7ZmaY3almNMpsAJsGW_TB5UCStSKsQTPJ5zedja2Vkwl0O-dZgzJUB5EMLxkcan4GP2WavbQCsPLc_q7LAY348LYCjSZUSD60r62UtEYE8rYFwVtF_GV5nA0O_fEaJ28dZdOKPclZvJy7eL30-3iKty64cl4W8_WqXBZYLP6jHvljT3E</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>LEE, HYOSAN</creator><creator>HAN, Sol</creator><creator>KIM, Tae-Hong</creator><creator>KIM, INGI</creator><creator>OH, Jung-Min</creator><creator>KIM, YUNGJUN</creator><creator>YOON, BOUN</creator><creator>KIM, Chae Lyoung</creator><scope>EVB</scope></search><sort><creationdate>20210401</creationdate><title>CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><author>LEE, HYOSAN ; HAN, Sol ; KIM, Tae-Hong ; KIM, INGI ; OH, Jung-Min ; KIM, YUNGJUN ; YOON, BOUN ; KIM, Chae Lyoung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021098261A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, HYOSAN</creatorcontrib><creatorcontrib>HAN, Sol</creatorcontrib><creatorcontrib>KIM, Tae-Hong</creatorcontrib><creatorcontrib>KIM, INGI</creatorcontrib><creatorcontrib>OH, Jung-Min</creatorcontrib><creatorcontrib>KIM, YUNGJUN</creatorcontrib><creatorcontrib>YOON, BOUN</creatorcontrib><creatorcontrib>KIM, Chae Lyoung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, HYOSAN</au><au>HAN, Sol</au><au>KIM, Tae-Hong</au><au>KIM, INGI</au><au>OH, Jung-Min</au><au>KIM, YUNGJUN</au><au>YOON, BOUN</au><au>KIM, Chae Lyoung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME</title><date>2021-04-01</date><risdate>2021</risdate><abstract>A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2021098261A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
title | CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T16%3A30%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE,%20HYOSAN&rft.date=2021-04-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2021098261A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |