IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A...

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creator HSIEH, CHENG-YU
description An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
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