IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A...
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creator | HSIEH, CHENG-YU |
description | An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021082978A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021082978A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021082978A13</originalsourceid><addsrcrecordid>eNrjZDDy9HV0d1UIdvUL9g9ScPRzUfB1DfHwd1FwA3J9Hf1C3RydQ0KDPP3cFUI8gOocfV15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGhgYWRpbmFo6ExcaoA9k8njg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>HSIEH, CHENG-YU</creator><creatorcontrib>HSIEH, CHENG-YU</creatorcontrib><description>An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210318&DB=EPODOC&CC=US&NR=2021082978A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210318&DB=EPODOC&CC=US&NR=2021082978A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSIEH, CHENG-YU</creatorcontrib><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME</title><description>An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDy9HV0d1UIdvUL9g9ScPRzUfB1DfHwd1FwA3J9Hf1C3RydQ0KDPP3cFUI8gOocfV15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGhgYWRpbmFo6ExcaoA9k8njg</recordid><startdate>20210318</startdate><enddate>20210318</enddate><creator>HSIEH, CHENG-YU</creator><scope>EVB</scope></search><sort><creationdate>20210318</creationdate><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME</title><author>HSIEH, CHENG-YU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021082978A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSIEH, CHENG-YU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSIEH, CHENG-YU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME</title><date>2021-03-18</date><risdate>2021</risdate><abstract>An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME |
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