STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE
The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first a...
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creator | UTESS, Dirk SAADAT, Irfan A KLEIMAIER, Dominik M ZHAO, Zhixing RAVAUX, Florent |
description | The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2021066463A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2021066463A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2021066463A13</originalsourceid><addsrcrecordid>eNrjZDAMDglyDQ5W8HGM9A8NUfAPCPH09YxyDPH091Nw8w9ScHEN83R2VQhwDQLyfB39nF15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGhgZmZiZmxo6ExcaoAHrcn2g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE</title><source>esp@cenet</source><creator>UTESS, Dirk ; SAADAT, Irfan A ; KLEIMAIER, Dominik M ; ZHAO, Zhixing ; RAVAUX, Florent</creator><creatorcontrib>UTESS, Dirk ; SAADAT, Irfan A ; KLEIMAIER, Dominik M ; ZHAO, Zhixing ; RAVAUX, Florent</creatorcontrib><description>The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210304&DB=EPODOC&CC=US&NR=2021066463A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210304&DB=EPODOC&CC=US&NR=2021066463A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UTESS, Dirk</creatorcontrib><creatorcontrib>SAADAT, Irfan A</creatorcontrib><creatorcontrib>KLEIMAIER, Dominik M</creatorcontrib><creatorcontrib>ZHAO, Zhixing</creatorcontrib><creatorcontrib>RAVAUX, Florent</creatorcontrib><title>STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE</title><description>The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMDglyDQ5W8HGM9A8NUfAPCPH09YxyDPH091Nw8w9ScHEN83R2VQhwDQLyfB39nF15GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGhgZmZiZmxo6ExcaoAHrcn2g</recordid><startdate>20210304</startdate><enddate>20210304</enddate><creator>UTESS, Dirk</creator><creator>SAADAT, Irfan A</creator><creator>KLEIMAIER, Dominik M</creator><creator>ZHAO, Zhixing</creator><creator>RAVAUX, Florent</creator><scope>EVB</scope></search><sort><creationdate>20210304</creationdate><title>STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE</title><author>UTESS, Dirk ; SAADAT, Irfan A ; KLEIMAIER, Dominik M ; ZHAO, Zhixing ; RAVAUX, Florent</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2021066463A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UTESS, Dirk</creatorcontrib><creatorcontrib>SAADAT, Irfan A</creatorcontrib><creatorcontrib>KLEIMAIER, Dominik M</creatorcontrib><creatorcontrib>ZHAO, Zhixing</creatorcontrib><creatorcontrib>RAVAUX, Florent</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UTESS, Dirk</au><au>SAADAT, Irfan A</au><au>KLEIMAIER, Dominik M</au><au>ZHAO, Zhixing</au><au>RAVAUX, Florent</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE</title><date>2021-03-04</date><risdate>2021</risdate><abstract>The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | STRESS LAYOUT OPTIMIZATION FOR DEVICE PERFORMANCE |
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