Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive...
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| creator | Billingsley, Daniel Tiwari, Chandra King, Matthew J Pak, Yung K Kash, Joan M Bilik, Narula Ng, Wei Yeeng Zhang, Xiaosong Williamson, Lance Li, Andrew Abdelrahaman, Ramey M Bo, Zhenyu Hu, Yi Wang, Yiping Neumeyer, David |
| description | A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed. |
| format | Patent |
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Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. 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| title | Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells |
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