SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS AND ASSOCIATED MANUFACTURING METHOD

A substrate for radiofrequency microelectronic devices comprises a carrier substrate made of a semi-conductor, a sintered composite layer disposed on the carrier substrate and formed from powders of at least a first dielectric material and a second dielectric different from the first material, the s...

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Bibliographische Detailangaben
Hauptverfasser: Radisson, Damien, Veytizou, Christelle, Allibert, Frederic
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A substrate for radiofrequency microelectronic devices comprises a carrier substrate made of a semi-conductor, a sintered composite layer disposed on the carrier substrate and formed from powders of at least a first dielectric material and a second dielectric different from the first material, the sintered composite layer having a thickness larger than 5 microns and a thermal expansion coefficient that is matched with that of the carrier substrate to plus or minus 30%.