BOND PAD RELIABILITY OF SEMICONDUCTOR DEVICES
The disclosed subject matter relates to a structure and method to improve bond pad reliability of semiconductor devices. According to an aspect of the present disclosure, a bond pad structure is provided that includes a dielectric layer and at least one bond pad in the dielectric layer, wherein the...
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creator | CHOCKALINGAM, RAMASAMY TAN, JUAN BOON MELVILLE, IAN |
description | The disclosed subject matter relates to a structure and method to improve bond pad reliability of semiconductor devices. According to an aspect of the present disclosure, a bond pad structure is provided that includes a dielectric layer and at least one bond pad in the dielectric layer, wherein the bond pad has a top surface. A passivation layer has an opening over the bond pad, wherein the opening has sidewalls. A low-k barrier layer is covering the sidewalls of the opening and the top surface of the bond pad. Protective structures are formed over the sidewalls of the opening. |
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According to an aspect of the present disclosure, a bond pad structure is provided that includes a dielectric layer and at least one bond pad in the dielectric layer, wherein the bond pad has a top surface. A passivation layer has an opening over the bond pad, wherein the opening has sidewalls. A low-k barrier layer is covering the sidewalls of the opening and the top surface of the bond pad. Protective structures are formed over the sidewalls of the opening.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210114&DB=EPODOC&CC=US&NR=2021013166A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210114&DB=EPODOC&CC=US&NR=2021013166A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOCKALINGAM, RAMASAMY</creatorcontrib><creatorcontrib>TAN, JUAN BOON</creatorcontrib><creatorcontrib>MELVILLE, IAN</creatorcontrib><title>BOND PAD RELIABILITY OF SEMICONDUCTOR DEVICES</title><description>The disclosed subject matter relates to a structure and method to improve bond pad reliability of semiconductor devices. 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According to an aspect of the present disclosure, a bond pad structure is provided that includes a dielectric layer and at least one bond pad in the dielectric layer, wherein the bond pad has a top surface. A passivation layer has an opening over the bond pad, wherein the opening has sidewalls. A low-k barrier layer is covering the sidewalls of the opening and the top surface of the bond pad. Protective structures are formed over the sidewalls of the opening.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | BOND PAD RELIABILITY OF SEMICONDUCTOR DEVICES |
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