APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generat...

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Hauptverfasser: Park, Wan Jae, Oh, Dong Sub, Oh, Sehoon, Lee, Ji-Hwan, Lee, Seong Gil, Kim, Dong-Hun
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Park, Wan Jae
Oh, Dong Sub
Oh, Sehoon
Lee, Ji-Hwan
Lee, Seong Gil
Kim, Dong-Hun
description An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
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